Selective-area atomic layer deposition with microcontactprinted self-assembled octadecyltrichlorosilane monolayers as masklayers

Author

Elina Färm,Marianna Kemell, Mikko Ritala, Markku Leskelä

Journal

Thin Solid Films

Publication Date

09/10/2008

Abstract

Selective-area atomic layer deposition (ALD) was studied using microcontactprinted self-assembled monolayers (SAM) as growth preventing masklayers. Patterned self-assembled octadecyltrichlorosilane (OTS, H3C(CH2)17SiCl3) monolayers were prepared on the silicon (100) surface by an elastomeric stamp which had 1.5 µm wide parallel print lines with 1.5 µm wide spaces in between. Passivation properties of the monolayers against ALD growth were verified by ALD processes of iridium and TiO2. Iridium was grown at 225 °C and TiO2 at 250 °C. The quality of SAM was controlled by water contact angle measurements. Patterned iridium and TiO2 films were studied with field emission scanning electron microscope and energy dispersive X-ray spectrometer.

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Date added: 2012-08-10 21:11:18 | Last time updated: 2012-08-10 19:11:18 | Viewed: 838 times

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